RF501B2S Datasheet, PDF (3/4 Pages) Rohm – Fast recovery diode (Silicon epitaxial planer)

Diodes
RF501B2S
10
DC
8
D=1/2
6
0A
Io
0V
VR
t
D=t/T
VR=100V
T Tj=150℃
4
Sin(θ＝180)
2
0
0
25 50 75 100 125 150
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
10
DC
8
D=1/2
6
4
Sin(θ＝180)
2
0A
Io
0V
VR
t
D=t/T
30
VR=100V
T ^Tj=150℃
25
20
15
10
5
0
0
0
25 50
75 100 125 150
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
No break at 30kV No break at 30kV
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
Rev.B
3/3