RF501B2S Datasheet, PDF (1/4 Pages) Rohm – Fast recovery diode (Silicon epitaxial planer)

Diodes
Fast recovery diode
(Silicon epitaxial planer)
RF501B2S
RF501B2S
zApplications
General rectification
zFeatures
1) Power mold type (CPD)
2) High reliability
3) Low V_F
4) Very fast recovery
5) Low switching loss
zConstruction
Silicon epitaxial planer
zExternal dimensions (Unit : mm)
6.5±0.2
5.1±0.2
　　　 0.1
C0.5
2.3±0.2
　　　 0.1
0.5±0.1
zLand size figure
6.0
1.6
1.6
①
0.9
（1） ^{（2）}
0.75
（3） 0.65±0.1
2.3±0.2 2.3±0.2
0.5±0.1
1.0±0.2
ROHM : CPD
JEITA : SC-63
① Manufacture Date
zTaping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
8.0±0.1
CPD 2.3 2.3
zStructure
φ1.55±0.1
　　　　　 0
0.4±0.1
TL
6.8±0.1
8.0±0.1
φ3.0±0.1
2.7±0.2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
200
V
Reverse voltage (DC)
V_R
200
V
Average rectified forward current (*1)
Io
5
A
Forward current surge peak （60Hz・1cyc）
I_FSM
40
A
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-55 to +150
℃
(*1) Business frequencies, Rating of R-load, 1/2 lo per diode, TC=180℃
zElectrical characteristic (Ta=25°C)
Parameter
Symbol
Forward voltage
V_F
Reverse current
I_R
Reverse recovery time
trr
Min. Typ. Max.
-
0.86 0.92
-
0.015 1
-
15
30
Unit
Conditions
V
I_F=5A
µA
V_R=200V
ns
I_F=0.5A,I_R=1A,Irr=0.25*I_R
Rev.B
1/3