RF501B2S Datasheet, PDF (2/4 Pages) Rohm – Fast recovery diode (Silicon epitaxial planer)

Diodes
zElectrical characteristic curves
10
10000
Ta=150℃
1
Ta=125℃
0.1
Ta=75℃
Ta=25℃
1000
100
Ta=-25℃
10
0.01
1
0.001
0 100 200 300 400 500 600 700 800 900 100
0
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0.1
0
890
100
TTaa==2255℃℃
90
880
IFIF==35AA
80
nn==3300ppccss
70
870
60
50
860
40
30
AVE:859.4mV
850
AVE:856.6mV
20
10
840
0
VF DISPERSION MAP
RF501B2S
Ta=150℃ _Ta=125℃
1000
Ta=75℃
100
Ta=25℃
10
Ta=-25℃
f=1MHz
50
100
150
200
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
Ta=T2a5=℃25℃
VR=V2R0=02V00
n=30pcVs
n=30pcs
AAVVEE::140.6.70nnAA
IR DISPERSION MAP
1
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
200
Ta=25℃
f=1MHz
190
VR=0V
n=10pcs
180
170
AVE:174.9pF
160
150
Ct DISPERSION MAP
300
250
200
150
100
50
0
1000
100
10
1
30
Ifsm
1cyc
25
8.3ms
20
15
AVE:167.0A
10
5
0
IFSM DISRESION MAP
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
AVE:14.5ns
trr DISPERSION MAP
1000
Ifsm
8.3ms 8.3ms
100
1cyc
10
1
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
Ifsm
t
TIME¹:t⁰(ms)
IFSM-t CHARACTERISTICS
100
Mounted on epoxy board
Rth(j-a)
10
Rth(j-c)
IM=100mA
IF=1A
1
1ms ^time
300us
0.1
100
0.001
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
10
8
DC
D=1/2
6
Sin(θ＝180)
4
2
0
0
2
4
6
8
10
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
Rev.B
2/3