RB496EA Datasheet, PDF (3/4 Pages) Rohm – Schottky barrier diode

Diodes
RB496EA
1
3
3
Per chip
0.8
0.6
Per chip
2.5
2
DC
0A
Io
0V
VR
t
D=t/T
VR=10V
T ^Tj=125℃
Per chip
2.5
2 _DC
0A
Io
0V
VR
t
D=t/T
VR=10V
T ^Tj=125℃
0.4
DC ^D=1/2
1.5
D=1/2
1
1.5
D=1/2
1
Sin(θ＝180)
0.2
0.5
0.5
Sin(θ＝
Sin(θ＝180)
0
0
180)
0
0
5
10
15
20
0
25
50
75 100 125
0
25
50
75 100 125
REVERSE VOLTAGE:VR(V)
VR-P_R CHARACTERISTICS
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve(Io-Ta)
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
Rev.A
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