RB496EA Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode

Diodes
zElectrical characteristic curves
RB496EA
1000
Ta=75℃
Ta=125℃
100
10
Ta=25℃
Ta=-25℃
100000
10000
1000
100
10
Ta=125℃
1000
Ta=75℃
Ta=25℃
100
Ta=-25℃
f=1MHz
1
0
200
400
600
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
1
0
5
10
15
20
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
10
0
5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
420
350
Ta=25℃
IF=1A
410
n=30pcs
340
400
330
390
320
380
310
AVE:384.2mV
370
300
300
Ta=25℃
IF=0.5A
n=30pcs
250
200
150
100
AVE:319.7mV
50
0
Ta=25℃
VR=10V
n=30pcs
AVE:62.1uA
VF DISPERSION MAP
VF DISPERSION MAP
IR DISPERSION MAP
300
50
30
290
Ta=25℃
280
f=1MHz
VR=0V
40
Ifsm
1cyc
25
Ifsm
270
n=10pcs
8.3ms
20
8.3ms 8.3ms
260
30
1cyc
250
15
240
230
AVE:270.5pF
220
210
20
10
10
5
AVE:14.6A
200
0
0
1
10
100
Ct DISPERSION MAP
IFSM DISRESION MAP
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
30
1000
1
25
Ifsm
t
20
100
Rth(j-a)
Rth(j-c)
Per chip
0.8
D=1/2
DC
0.6
15
Mounted on epoxy board
Sin(θ＝180)
IM=10mA
IF=0.5A
0.4
10
10
5
1ms ^time
0.2
300us
0
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
1
0.001
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0
0
0._A5_VERAGE 1_RECTIFIED1.5
2
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
Rev.A
2/3