RB496EA Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB496EA
RB496EA
zApplications
Low current rectification
zFeatures
1) Small mold type (TSMD5)
2) Low IR
3) High reliability
zStructure
Silicon epitaxial planer
zExternal dimensions (Unit : mm)
2.9±0.1
0.4_{　＋－00..105} 各リEーachドleとadもha同s s寸am法e dimension
(5)
(4)
0.16±0.1
0.06
0～0.1
(1)
(2)
(3)
0.95
0.95
1.9±0.2
0.33±0.03
0.7±0.1
0.85±0.1
1.0Max
ROHM : TSMD5
dot (year week factory) + day
zTaping dimensions (Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
zLand size figure (Unit : mm)
0.8
0.45 0.35 _0.7 ^{0.35 0.45}
0.95 0.95
1.9
TSMD5
zStructure
0.3±0.1
3.2±0.08
4.0±0.1
φ1.1±0.1
1.1±0.08
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage
V_R
20
V
Average rectified forward current (*1)
Io
1
A
Forward current surge peak (60Hz・1cyc) (*1) I_FSM
10
A
Junction temperature
Tj
125
℃
Storage temperature
Tstg
-40 to +125
℃
(*1) Rating of per diode
zElectrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol
V_F1
V_F2
I_R
Min.
-
-
-
Typ.
-
-
-
Max.
0.35
0.40
500
Unit
Conditions
V I_F=0.5A
V I_F=1A
µA V_R=10V
Rev.A
1/3