RB495D_1 Datasheet, PDF (3/4 Pages) Rohm – Shottky barrier diode

Diodes
RB495D
1
Per chip
0.8
0.6
D=1/2
0.4
DC
Sin(θ＝180)
0.2
0
0
10
20
30
40
REVERSE VOLTAGE:VR(V)
VR-P_R CHARACTERISTICS
0.5
Per chip
0.4
DC
0.3
D=1/2
0.2
0A
Io
0V
t
VR
D=t/T
VR=20V
T Tj=125℃
0.1 Sin(θ＝180)
0
0
25
50
75 100 125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
0.5
Per chip
0.4
DC
0.3
D=1/2
0.2
0A
Io
0V
t
VR
D=t/T
VR=20V
T Tj=125℃
0.1 Sin(θ＝180)
0
0
25
50
75 100 125
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
Rev.B
3/3