RB495D_1 Datasheet, PDF (1/4 Pages) Rohm – Shottky barrier diode

Diodes
Shottky barrier diode
RB495D
RB495D
zApplication
General rectification.
zFeatures
1) Small mold type. (SMD3)
2) Low IR
3) High reliability.
zStructure
Silicon epitaxial planar
zExternal dimensions (Unit : mm)
2.9±0.2
各リードとも
0.4 ^{＋0.1 Each同le寸ad法has same dimension}
　－0.05
(3)
＋0.1
0.15－0.06
(2)
(1)
0.95
0.95
1.9±0.2
0～0.1
0.8±0.1
1.1±0.2
0.01
ROHM : SMD3
JEDEC :S0T-346
JEITA : SC-59
week code
zTaping dimensions (Unit : mm)
4.0±0.1
2.0±0.05
φ1.5±0.1
　　　　　 0
zLead size figure (Unit : mm)
1.9
0.95
0.8MIN.
SMD3
zStructure
0.3±0.1
3.2±0.1
4.0±0.1
φ1.05MIN
1.35±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
40
V
Reverse voltage (DC)
V_R
25
V
Average rectified forward current (*1)
Io
0.4
A
Forward current surge peak (60Hz・1cyc)
I_FSM
2
A
Junction temperature
Tj
125
℃
Storage temperature
Tstg
-40 to +125
℃
(*1)Rating of per diode：Io/2
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F1
-
- 0.30
V_F2
-
- 0.50
Reverse current
I_R1
-
-
70
Unit
Conditions
V
I_F=10mA
V
I_F=200mA
µA
V_R=25V
Rev.B
1/3