RB495D_1 Datasheet, PDF (2/4 Pages) Rohm – Shottky barrier diode

Diodes
RB495D
zElectrical characteristic curves (Ta=25°C)
1
Ta=75℃
Ta=125℃
0.1
0.01
Ta=25℃
Ta=-25℃
100000
10000
1000
100
10
1
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0.001
0
100 200 300 400 500 600
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0.1
0
5 10 15 20 25 30 35 40
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
100
f=1MHz
10
1
0 5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
380
200
100
370
Ta=25℃
180
IF=200mA
n=30pcs
160
Ta=25℃
VR=25V
95
n=30pcs
90
Ta=25℃
f=1MHz
VR=0V
140
85
n=10pcs
360
120
80
100
75
350
80
70
60
AVE:33.62uA
65
340
40
60
AVE:359.0mV
20
55
AVE:71.8pF
330
0
50
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
30
25
Ifsm
1cyc
20
8.3ms
15
10
5
AVE:12.50A
0
IFSM DISRESION MAP
30
20
Ta=25℃
25
IF=0.5A
Ifsm
20
IR=1A
15
Irr=0.25*IR
n=10pcs
8.3ms 8.3ms
1cyc
15
10
10
5
AVE:8.6ns
0
trr DISPERSION MAP
5
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
20
15
10
5
0
1
Ifsm
t
1000
100
Rth(j-a)
Rth(j-c)
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
Mounted on epoxy board
10
IM=1mA
IF=10mA
1
0.001
1ms ^time
300us
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0.3
Per chip
0.2
D=1/2
Sin(θ＝180)
DC
0.1
0
0
0.1 0.2 0.3 0.4 0.5
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
Rev.B
2/3