RB160L-90 Datasheet, PDF (3/4 Pages) Rohm – Schottky barrier diode

Diodes
RB160L-90
1
0.8
D=1/2
0.6
DC
0.4
Sin(θ＝180)
0.2
0
0 10 20 30 40 50 60 70 80 90
REVERSE VOLTAGE:VR(V)
VR-P_R CHARACTERISTICS
3
0A
2.5
0V
2
DC
1.5
D=1/2
1
Sin(θ＝180)
0.5
t
T
Io
VR
D=t/T
VR=45V
Tj=150℃
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
3
2.5
2
1.5
1
0.5
0
0
DC
D=1/2
0A
Io
0V
t
VR
D=t/T
VR=45V
T Tj=150℃
Sin(θ＝180)
25 50 75 100 125 150
CASE TEMPARATURE:Tc(℃)
Derating Curve(Io-Tc)
30
25
20
15
AVE:10.7kV
10
AVE:1.70kV
5
0
C=200pF
C=100pF
R=0Ω
R=1.5kΩ
ESD DISPERSION MAP
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