RB160L-90 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB160L-90
RB160L-90
zApplications
General rectification
zFeatures
1) Small power mold type.
(PMDS)
2) Low IR
3) High reliability
zConstruction
Silicon epitaxial planar
zExternal dimensions (Unit : mm)
2.6±0.2
zLand size figure (Unit : mm)
2.0
44
①②
1.5±0.2
0.1±0.02
　　　 0.1
2.0±0.2
PMDS
zStructure
ROHM : PMDS
JEDEC : SOD-106
① ② Manufacture Date
zTaping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
φ1.55±0.05
0.3
2.9±0.1
4.0±0.1
φ1.55
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
V_RM
Reverse voltage (DC)
V_R
Average rectified forward current
Io
Forward current surge peak （60Hz・1cyc） I_FSM
Junction temperature
Tj
Storage temperatuer
Tstg
(*1)　Mounted on epoxy board.　180°Half sine wave
Limits
95
90
1
30
150
-40 to +150
2.8MAX
Unit
V
V
A
A
℃
℃
zElectrical characteristic (Ta=25°C)
Parameter
Symbol Min.
Forward voltage
V_F
-
Reverse current
I_R
-
Typ. Max.
- 0.73
-
100
Unit
Conditions
V
I_F=1.0A
µA
V_R=90V
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