RB160L-90 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode

Diodes
RB160L-90
zElectrical characteristic curves
1
Ta=75℃
Ta=125℃
0.1
Ta=150℃
Ta=25℃
Ta=-25℃
10000
1000
100
10
Ta=150℃
Ta=125℃
Ta=75℃
Ta=25℃
0.01
1
Ta=-25℃
0.1
0.001
0
100 200 300 400 500 600 700
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0.01
0
10 20 30 40 50 60 70 80 90
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1000
100
10
1
0
f=1MHz
5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
650
100
Ta=25℃
IF=1A
90
640
n=30pcs
80
70
630
60
AVE:632.1mV
50
620
40
30
610
20
10
0
600
VF DISPERSION MAP
200
Ta=25℃
190
VVTRaR⁼⁼=²¹⁵⁰9^℃00VV
180
nn==3300pcpscs
170
160
150
140
AVE:478.3nA
130
σ:36.1612nA
AVE:4.655uA
120
110
100
IR DISPERSION MAP
Ta=25℃
f=1MHz
VR=0V
n=10pcs
AVE:149.6pF
Ct DISPERSION MAP
200
30
Ifsm
1cyc
25
150
8.3ms
20
100
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
Ifsm
8.3ms 8.3ms
1cyc
100
AVE:56.0A
15
AVE:7.40ns
50
10
50
5
0
IFSM DISRESION MAP
0
trr DISPERSION MAP
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
150
1000
2
IM=10mA
IF=0.5A
Ifsm
t
100
1ms time
Rth(j-a)
100
300us
D=1/2 DC
Rth(j-c)
10
1
Sin(θ＝180)
50
1
0
0.1
0
1
10
100
0.001 0.01 0.1 1 10 100 1000
0
TIME:t(ms)
TIME:t(s)
IFSM-t CHARACTERISTICS
Rth-t CHARACTERISTICS
1
2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
2/3