RB160A30_1 Datasheet, PDF (3/4 Pages) Rohm – Schottky barrier diode

Diodes
RB160A30
0.1
0.08
0.06
Sin(θ＝180)
0.04
D=1/2
DC
0.02
3
2.5
2
DC
1.5
D=1/2
1
0A
Io
0V
t
VR
D=t/T
VR=15V
T ^Tj=125℃
0.5 _{Sin(θ＝180)}
3
0A
Io
2.5
0V
VR
t
D=t/T
2
VR=15V
DC
T Tj=125℃
1.5
D=1/2
1
0.5
Sin(θ＝180)
0
0
5
10
15
20
REVERSE VOLTAGE:VR(V)
VR-P_R CHARACTERISTICS
0
0
25
50
75 100 125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve(Io-Ta)
0
0
25
50
75 100 125
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
30
No break at 30kV
25
20
15
10
5
AVE:6.90kV
0
C=200pF
C=100pF
R=0Ω
R=1.5kΩ
ESD DISPERSION MAP
Rev.B
3/3