RB160A30_1 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB160A30
RB160A30
zApplications
General rectification
zFeatures
1) Cylindrical mold type. (MSR)
2) High I surge capability.
3) Low I_R.
4) High ESD.
z Dimensions (Unit : mm)
CATH O D E　 B AN D
φ0.6±0.1
29±1
3.0±0.2
ROHM : MSR
①
②
Manufacture Date
29±1
φ2.5±0.2
zConstruction
Silicon epitaxial planar
z Taping specifications (Unit : mm)
H2
A
BLUE
E
L1
H1
L2
F
BROWN
Symbol
Standard dimension
value(mm)
T-31 　 52.4±1.5
Ａ
+0.4
T-32 26.0 ₀
B
B ^{T-31 　 5.0±0.5}
T-31 5.0±0.3
C ^T-31 1.0 max.
T-32
C
D ^T-31
0
T-32
E ^{T-31 1/2A±1.2}
T-32 1/2A±0.4
Ｆ ^{T-31 ±0.7}
T-32 0.2 max.
H1 ^T-31 6.0±0.5
T-32
H2 ^T-31 5.0±0.5
T-32
D
|L1-L2| ^{T-31 1.5 max.}
T-32 0.4 max.
＊H1(6mm)：BROWN
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak （t=100µs）
Junction temperature
Storage temperature
Symbol
V_RM
V_R
Io
I_FSM
Tj
Tstg
(*1)Mounted on epoxy board. 180°Half sine wave
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ.
Forward voltagae
V_F
Reverse current
I_R
ESD break down voltage ESD
0.33 0.43
-
9.00
20
-
Limits
30
30
1
70
150
-55 to +150
Max.
Unit
0.48
V
50
µA
-
kV
Unit
V
V
A
A
℃
℃
Conditions
I_F=1.0A
V_R=30V
C=100pF,R=1.5kΩ, forward and reverse : 1 time
Rev.B
1/3