RB160A30_1 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode

Diodes
RB160A30
zElectrical characteristic curves (Ta=25°C)
1
Ta=75℃
Ta=125℃
0.1
0.01
Ta=25℃
Ta=-25℃
0.001
0
100 200 300 400 500 600
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
10000
1000
100
10
1
0.1
0.01
0
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
5 10 15 20 25 30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1000
100
f=1MHz
10
1
0 5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
450
100
400
440
Ta=25℃
90
IF=1A
n=30pcs
80
70
Ta=25℃
390
VR=30V
380
n=30pcs
370
Ta=25℃
f=1MHz
VR=0V
n=10pcs
430
60
360
50
350
AVE:324.4pF
420
40
340
AVE:424.2mV
30
AVE:8.172uA
330
410
20
320
10
310
400
0
300
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
150
20
1cyc
Ifsm
8.3ms
15
100
100
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
50
AVE:98.0A
0
IFSM DISRESION MAP
10
AVE:11.7ns
5
0
trr DISPERSION MAP
50
Ifsm
8.3ms 8.3ms
1cyc
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
Mounted on epoxy board
150
1000
1
IF=0.5A
Rth(j-a)
Ifsm
t
Rth(j-l)
0.8
IM=1mA
time(s)
DC
D=1/2
100
100
td=300us
0.6
Rth(j-c)
0.4 Sin(θ＝180)
50
10
0.2
0
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
1
0.001 0.01
0.1
1
10
100 1000
TIME:t(s)
Rth-t CHARACTERISTICS
0
0
0.5
1
1.5
2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
Rev.B
2/3