RB095B-40 Datasheet, PDF (3/4 Pages) Rohm – Schottky barrier diode (Silicon Epitaxial Planer)

Diodes
RB095B-40
10
8
6
4
2
0
0
30
25
20
15
10
5
0
Sin(θ＝180)
D=1/2
DC
10
20
30
40
REVERSE VOLTAGE:VR(V)
VR-P_R CHARACTERISTICS
No break at 30kV
AVE:15.6kV
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
15
DC
10
D=1/2
0A
Io
0V
t
VR
D=t/T
VR=20V
T Tj=150℃
5
Sin(θ＝180)
15
DC
10
D=1/2
0A
Io
0V
t
VR
D=t/T
VR=20V
T Tj=150℃
5
Sin(θ＝180)
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve (Io-Ta)
0
0 25 50 75 100 125 150
CASE TEMPARATURE:Tc(℃)
Derating Curve (Io-Tc)
Rev.A
3/3