RB095B-40 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode (Silicon Epitaxial Planer)

Diodes
RB095B-40
zElectrical characteristic curves
10
Ta=150℃
1000000
100000
1 ^Ta=125℃
Ta=75℃
0.1
Ta=-25℃
Ta=25℃
10000
1000
100
10
1
0.1
0.01
0
100 200 300 400 500 600 700
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0.01
0
Ta=150℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
5 10 15 20 25 30 35 40
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1000
100
10
1
0
f=1MHz
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
500
200
Ta=25℃
IF=3A
490
n=30pcs
150
480
100
470
460
AVE:472.9mV
50
450
0
VF DISPERSION MAP
650
Ta=25℃
640
VR=40V
n=30pcs
630
620
610
600
590
580
AVE:14.2uA
570
560
550
IR DISPERSION MAP
AVE:617.9pF
Ta=25℃
f=1MHz
VR=0V
n=10pcs
Ct DISPERSION MAP
300
30
250
Ifsm
1cyc
25
200
8.3ms
20
150
15
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
1000
100
Ifsm
8.3ms 8.3ms
1cyc
100
50
AVE:76.0A
0
IFSM DISRESION MAP
10
AVE:11.40ns
5
0
trr DISPERSION MAP
10
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1000
100
Ifs
t
100
Mounted on epoxy board
IM=100mA
IF=3A
1ms time
10
300us
1
10
Rth(j-a)
5
Rth(j-c)
Sin(θ＝180)
D=1/2 ^DC
10
1
TIME:1t(0ms)
IFSM-t CHARACTERISTICS
t(ms)
0.1
100
0.001
0.1TIME:t(s) 10
Rth-t CHARACTERISTICS
0
1000
0
2
4
6
8
10
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
Rev.A
2/3