RB070M-30 Datasheet, PDF (3/4 Pages) Rohm – Schottky barrier diode (Silicon Epitaxial Planer)

Diodes
RB070M-30
0.5
0.4
0.3
0.2
0.1
0
0
Sin(θ＝180)
D=1/2
DC
10
20
30
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
5
5
0A
Io
4
0V
4
VR
t
D=t/T
3 ^D=1/2 _DC
VR=15V
T Tj=150℃
3
DC
0A
Io
0V
VR
t
D=t/T
VR=15V
T ^Tj=150℃
2
2
D=1/2
1
Sin(θ＝180)
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve (Io-Ta)
1
Sin(θ＝180)
0
0 25 50 75 100 125 150
CASE TEMPARATURE:Tc(℃)
Derating Curve (Io-Tc)
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