RB070M-30 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode (Silicon Epitaxial Planer)

Diodes
RB070M-30
zElectrical characteristic curves
10
Ta=75℃
Ta=125℃
1
Ta=150℃
0.1
Ta=25℃
Ta=-25℃
100000
10000
1000
100
10
0.01
1
0.1
0.001
0
100 200 300 400 500 600
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0.01
0
Ta=150℃ Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
5 10 15 20 25 30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1000
100
10
1
0
f=1MHz
5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
470
Ta=25℃
460
IF=1.5A
n=30pcs
450
440
430
AVE:441.5mV
420
VF DISPERSION MAP
200
Ta=25℃
400
180
VR=30V
390
160
n=30pcs
380
140
370
120
360
100
350
80
340
60
330
40
AVE:8.828uA
320
20
310
0
300
Ta=25℃
f=1MHz
VR=0V
n=10pcs
AVE:332.6pF
IR DISPERSION MAP
Ct DISPERSION MAP
150
20
Ifsm
1cyc
8.3ms
15
100
100
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
10
50
AVE:96.0A
50
0
IFSM DISRESION MAP
AVE:9.30ns
5
0
trr DISPERSION MAP
Ifsm
8.3ms 8.3ms
1cyc
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
150
Ifs
t
100
50
0
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
2
Mounted on epoxyboard
Rth(j-a)
1.5
100
D=1/2
DC
Rth(j-c)
1 Sin(θ＝180)
IM=10mA
IF=1.5A
10
0.5
1ms ^time
300us
1
0
100
0.001
0.1
10
1000
TIME:t(s)
Rth-t CHARACTERISTICS
0
1
2
3
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
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