RB070M-30 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode (Silicon Epitaxial Planer)

Diodes
Schottky barrier diode
(Silicon Epitaxial Planer)
RB070M-30
RB070M-30
zApplications
General rectification
(Common cathode dual chip)
zFeatures
1) Small power mold type.
(PMDU)
2) Low IR
3) High reliability
zExternal dimensions (Unit : mm)
1.6±0.1
0.15±0.03
zLand size figure
1.2
0～0.1
0.9±0.1
0.8±0.1
PMDU
ROHM : PMDU
JEDEC : SOD-123
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zStructure
zTaping dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.1
　　　　　 0.05
0.25±0.05
1.81±0.05
4.0±0.1
φ1.0±0.2
　　　　　0
1.05±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
VRM
Reverse voltage (DC)
VR
Average rectified forward current
∗
IO
Forward current surge peak (60Hz 1cyc.)
IFSM
Junction temperature
Tj
Storage temperature
Tstg
∗ Glass epoxy substrate at the time of assembler, half sine wave at 180°.
Limits
30
30
1.5
30
150
−40 to 150
zElectrical characteristic (Ta=25°C)
Parameter
Symbol
VF1
Forward voltage
VF2
Reverse current
IR
∗Please pay attention to static electricity when handling.
Min.
−
−
−
Typ.
0.37
0.44
9
Unit
V
V
A
A
°C
°C
Max.
0.43
0.49
50
Unit
Conditions
V
IF=0.5A
V
IF=1.5A
µA
VR=30V
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