BU7150NUV_15 Datasheet, PDF (3/22 Pages) Rohm – Headphone Amplifier Designed for 0.93V Low Voltage Operation

BU7150NUV
Technical Note
●Electrical characteristics waveform (Reference data)
Ta=25°C, f=1kHz, VSS=GND unless otherwise specified. Using circuits are Fig.34 and Fig.35.
Also, RL=16Ω for single ended mode, RL=8Ω for BTL mode）
0
VDD=1.5V, SE m ode
-10
0
VDD=1.5V, BTL m ode
-10
-20
-20
-30
-30
-40
-40
-50
-50
-60
-60
-70
10n
100n 1u 10u 100u 1m 10m 100m
Output Power [W]
Fig. 2 THD+N vs . Output Power
-70
10n
100n 1u 10u 100u 1m 10m 100m
Output Power [W]
Fig. 3 THD+N vs . Output Power
0
VDD=1.2V, SE m ode
-10
-20
-30
-40
-50
-60
10n
100n 1u 10u 100u 1m 10m 100m
Output Power [W]
Fig. 4 THD+N vs . Output Power
0
VDD=1.2V, BTL m ode
-10
-20
-30
-40
-50
-60
10n
100n 1u 10u 100u 1m 10m 100m
Output Power [W]
Fig. 5 THD+N vs . Output Power
0
-10
VDD=1.5V, Po=5m W,
SE mode, BW<80kHz
-20
-30
-40
-50
-60
-70
-80
10
100
1k
10k
Frequency [Hz]
Fig. 6 THD+N vs . Frequency
100k
0
VDD=1.5V, Po=25m W,
-10 _{BTL m ode, BW<80kHz}
-20
-30
-40
-50
-60
-70
-80
10
100
1k
10k
Frequency [Hz]
Fig. 7 THD+N vs . Frequency
100k
0
-10
VDD=1.2V, Po=2.5m W,
SE m ode, BW<80kHz
-20
-30
-40
-50
-60
-70
-80
10
100
1k
10k
Frequency [Hz]
Fig. 8 THD+N vs . Frequency
100k
0
VDD=1.2V, Po=10m W,
-10 _{BTL m ode, BW<80kHz}
-20
-30
-40
-50
-60
-70
-80
10
100
1k
10k
Frequency [Hz]
Fig. 9 THD+N vs . Frequency
100k
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3/18
2015.1 - Rev.E