2SA854S Datasheet, PDF (3/4 Pages) Rohm – Medium Power Transistor

Transistors
2SA854S
1000
500
200
100
50
Ta=25°C
VCE=−5V
−3V
−1V
1000
500
200
100
50
Ta=100°C
25°C
−55°C
VCE=−3V
20 _{-1 -2 -5 -10 -20 -50 -100 -200 -500 -1000}
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current ( Ι )
20
-1 -2 -5 -10 -20 -50 -100 -200 -500 -1000
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs.
collector current (ΙΙ)
Ta=25°C
-1
-0.5
-0.2
-0.1 _IC/IB=50
-0.05
20
10
-0.02
-1 -2 -5 -10 -20 -50 -100 -200 -500
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current (ΙΙ)
-1.0
lC/lB=10
Ta=25°C
VCE=−5V
-0.5
1000
-0.3
-0.2
500
-0.1
Ta=100°C
25°C
-0.05
−55°C
-0.03
-0.02
-0.01
-1 -2 -5 -10 -20 -50 -100 -200 -500 -1000
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (_ΙΙ)
200
100
50
0.5 1 2
5 10 20
50
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
Ta=25°C
f=1MHz
IE=0A
100
IC=0A
50
20
10
5
2
-0.5 -1 -2
-5 -10 -20
-50
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9 Collector output capacitance vs.
collector-base voltage. Emitter input
capacitance vs. emitter-base voltage
Rev.A
3/3