2SA854S Datasheet, PDF (1/4 Pages) Rohm – Medium Power Transistor

Transistors
Medium Power Transistor
(-32V, -0.5A)
2SA854S
2SA854S
zFeatures
1) Large I_C.
I_CMAX. = -500mA
2) Low V_CE(sat). Idea for low-voltage operation.
3) Complements the 2SC1741S.
zExternal dimensions (Unit : mm)
2SA854S
4 ±0.2
2±0.2
zStructure
Epitaxial planar type
PNP silicon transistor
0.45_−+^00..1055
2.5_−+
0.4
0.1
5
(1) (2) (3)
ROHM : SPT
EIAJ : SC-72
∗ Denotes hFE
0.5
0.45_−+
0.15
0.05
(1) Emitter
(2) Collector
(3) Base
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Storage temperature
∗ PC MAX. must not be exceeded.
Tstg
Limits
−40
−32
−5
−0.5
0.3
150
−55 to +150
Unit
V
V
V
A_∗
W
°C
°C
Rev.A
1/3