2SA854S Datasheet, PDF (2/4 Pages) Rohm – Medium Power Transistor

Transistors
2SA854S
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage
BVCBO −40
Collector-emitter breakdown voltage BVCEO −32
Emitter-base breakdown voltage
BVEBO −5
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE (sat) −
DC current transfer ratio
Transition frequency
Output capacitance
hFE
120
fT
−
Cob
−
Typ.
−
−
−
−
−
−
−
200
8
Max.
−
−
−
−1
−1
−0.6
390
−
−
Unit
V
V
V
µA
µA
V
−
MHz
pF
Conditions
IC=−100µA
IC=−1mA
IE=−100µA
VCB=−20V
VEB=−4V
IC/IB=−500mA/−50mA
VCE=−3V, IC=−100mA
VCE=−5V, IE=20mA, f=100MHz
VCB=−10V, IE=0A, f=1MHz
zPackaging specifications and hFE
Package
Code
Type
hFE Basic ordering unit (pieces)
2SA854S QR
Taping
T146
3000
−
hFE values are classified as follows :
Item
Q
R
hFE
120~270 180~390
zElectrical characteristic curves
-500
-200 ^Ta=100°C
25 °C
-100 _{−55°C}
-50
VCE=−3V
-20
-10
-5
-2
-1
-0.5
-0.2
-0.1
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
-100 _Ta=25°C
−1mA
-80
−0.9mA
−0.8mA
−0.7mA
−0.6mA
-60
−0.5mA
−0.4mA
-40
−0.3mA
-20
−0.2mA
−0.1mA
0
IB=0A
0
-1
-2
-3
-4
-5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics (Ι )
-500
Ta=25°C
-400
−5.0mA
−4.5mA
−4.0mA
−3.5mA
-300
−3.0mA
−2.5mA
−2.0mA
-200
−1.5mA
−1.0mA
-100
−0.5mA
0
IB=0A
0
-5
-10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics (ΙΙ)
Rev.A
2/3