HP8S36 Datasheet, PDF (2/19 Pages) Rohm – 30V Nch+Nch Middle Power MOSFET

HP8S36
　 　 　 　　 　
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Tr1:Nch
Tr2:Nch
total
　 　 　 　 　 　 　 　 _Datasheet
　 　 　　　　　　　　　　　　　　　　
Symbol
R_thJC*1
R_thJC*1
R_thJA*4
Values
Unit
Min. Typ. Max.
-
- 5.6 ℃/W
-
- 4.3 ℃/W
-
- 41.7 ℃/W
lElectrical characteristics (T_a = 25°C)
Parameter
Symbol Type
Conditions
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Tr1
V_(BR)DSS
Tr2
　^ΔV(BR)DSS　 Tr1
　　 ^ΔT_j 　 　 Tr2
V_GS = 0V, I_D = 1mA
V_GS = 0V, I_D = 1mA
I_D = 1mA, referenced to 25℃
I_D = 1mA, referenced to 25℃
Zero gate voltage
drain current
I_DSS ^{Tr1 VDS = 24V, VGS = 0V}
Tr2 V_DS = 24V, V_GS = 0V
Gate - Source
leakage current
I_GSS
Tr1 V_DS = 0V, V_GS = ±20V
Tr2 V_DS = 0V, V_GS = ±10V
Gate threshold
voltage
Gate threshold voltage
temperature coefficient
Tr1
V_GS(th)
Tr2
　ΔV_GS(th) 　 Tr1
　　 ΔT_j 　 　 Tr2
V_DS = V_GS, I_D = 1mA
V_DS = V_GS, I_D = 1mA
I_D = 1mA, referenced to 25℃
I_D = 1mA, referenced to 25℃
Static drain - source
on - state resistance
V_GS = 10V, I_D = 12A
Tr1
R_DS(on)*5
V_GS = 4.5V, I_D = 12A
V_GS = 10V, I_D = 32A
Tr2
V_GS = 4.5V, I_D = 32A
Gate resistance
Tr1
R_G
f=1MHz, open drain
Tr2
Forward Transfer
Admittance
|Y_fs|^{*5 Tr1 VDS = 5V, ID = 12A}
Tr2 V_DS = 5V, I_D = 32A
*1Tc=25℃, Limited only by maximum temperature allowed.
*2 Pw ≦ 10μs, Duty cycle ≦ 1%
*3 L ⋍ 0.05mH, V_DD = 15V, R_G = 25Ω, STARTING T_j = 25℃ Fig.3-1,3-2
*4 Mounted on a Cu board (40×40×0.8mm)
*5 Pulsed
Values
Unit
Min. Typ. Max.
30 - -
V
30 - -
- 28 -
mV/℃
- 18.5 -
-
-
1
μA
-
- 500
-
- ±100
nA
-
- ±100
1.3 - 2.5
V
1.3 - 2.5
- -3.87 -
mV/℃
- -2.38 -
- 6.7 8.8
- 9.1 13.3
mΩ
- 2.0 2.4
- 2.3 2.8
- 2.3 -
Ω
- 0.85 -
10 - -
S
30 - -
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　
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20160515 - Rev.001