HP8S36 Datasheet, PDF (1/19 Pages) Rohm – 30V Nch+Nch Middle Power MOSFET

HP8S36
　　30V Nch+Nch Middle Power MOSFET
Symbol
V_DSS
R_DS(on)(Max.)
I_D
P_D
Tr1:Nch Tr2:Nch
30V 30V
8.8mΩ 2.4mΩ
±27A ±80A
22W 29W
lFeatures
1) Low on - resistance.
2) Pb-free lead plating ; RoHS compliant.
3) Halogen Free.
4) Built in Schottky-barrier diode(Tr2)
lOutline
HSOP8
　
　
　　　　　　
lInner circuit
　　 ^Datasheet
　
lPackaging specifications
Packing
Embossed
Tape
lApplication
Reel size (mm)
330
Switching
Type ^{Tape width (mm)}
Basic ordering unit (pcs)
12
2500
Taping code
TB
Marking
HP8S36
lAbsolute maximum ratings (T_a = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Tr1:Nch Tr2:Nch
Drain - Source voltage
V_DSS
30 30
V
Continuous drain current
I_D*1
±27 ±80
A
I_D
±12 ±32
A
Pulsed drain current
I_DP*2
±48 ±128
A
Gate - Source voltage
V_GSS
±20 ±12
V
Avalanche current, single pulse
I_AS*3
12 32
A
Avalanche energy, single pulse
E_AS*3
5.3 39.3
mJ
Power dissipation
element
total
P_D*1
22 29
W
P_D*4
3.0
W
Junction temperature
T_j
150
℃
Operating junction and storage temperature range
T_stg
-55 to +150
℃
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　
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20160515 - Rev.001 ^{　 　}