BU64240GWZ Datasheet, PDF (2/6 Pages) Rohm – Silicon Monolithic Integrated Circuit

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 Electrical Characteristics (Unless otherwise specified Ta=25°C, VCC=3.0V )
Parameter
Limit
Symbol
Unit
Min.
Typ.
Max.
Overall
Circuit current
ICCST
-
during standby operation
0
5
μA
Circuit current
ICC
-
0.6
1.0
mA
Power save input
High level input voltage
VPSH
1.26
-
VCC
V
Low level input voltage
VPSL
0
-
0.5
V
Low level input current
IPSL
-10
-
10
μA
High level input current
IPSH
-10
-
10
μA
Control input (VIN=SCL, SDA)
High level input voltage
VINH
1.26
-
VCC
V
Low level input voltage
VINL
0
-
0.5
V
Low level output voltage VINOL
-
-
0.4
V
High level input current
IINH
-10
-
10
μA
Low level input current
IINL
-10
-
10
μA
UVLO
UVLO voltage
VUVLO 1.6
-
2.2
V
10bit D/A converter(for setting limit voltage)
Resolution
DRES
-
10
-
Bits
Differential Nonlinearity
DDNL
-1
-
1
LSB
Integral Nonlinearity
DINL
-4
-
4
LSB
Constant-Current Driver block
Output current resolution IORES
-
126
-
μA
Output maximum current IOMAX
117
130
143
mA
Zero code offset current IOOFS
0
1
5
mA
Output Voltage
VOUT
-
150
200
mV
Maximum applied voltage VOMAX
-
-
VCC
V
Conditions
PS=0V
PS=3V, SCL=400kHz
VPS=0V
VPS=3V
IIN=+3.0mA (SDA)
Input voltage=0.9×VIN
Input voltage=0.1×VIN
DACcode = 3’h3FF
DACcode = 3’h000
Io = 100mA
This specification is supposed to be revised for improvement etc.
REV. A