BU9890GUL-W Datasheet, PDF (11/14 Pages) Rohm – Silicon Monolithic Integrated Circuit

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◇BYTE WRITE
SDA
LINE
S
W
T
R
A
R
T
SLAVE
ADDRESS
I
T
E
1st WORD
ADDRESS
10100 00
WA
* * * * ₁₁
2nd WORD
ADDRESS
DATA
WA
0 ^D7
S
T
O
P
D0
RA
A
A
A
/C
C
C
C
WK
K
K
K
WP
* : Don’t care
Fig.-8 BYTE WRITE CYCLE TIMING
○By using this command, the data is programed into the indicated word address.
○When the master generates a STOP condition, the device begins the internal
write cycle to the nonvolatile memory array.
SDA
LINE
WP
S
W
T
R
A
R
T
SLAVE
ADDRESS
I
T
E
1st WORD
ADDRESS（ｎ）
2nd WORD
ADDRESS（ｎ）
DATA(n)
S
T
DATA(n+31)
O
P
1 0 10 0 0 0
WA
* * * * ₁₁
WA
0 ^D7
D0
D0
RA
A
A
A
A
/C
C
C
C
C
WK
K
K
K
K
* : Don’t care
Fig.-9 PAGE WRITE CYCLE TIMING
○This device is capable of thirty-two byte Page Write operation.
○When two or more byte data are inputted, the five low order address(WA4～WA0) bits are in
ternally incremented by one after the receipt of each word. The seven higher order bits of
the address(WA4～WA0) remain constant.
REV. A