BU9890GUL-W Datasheet, PDF (1/14 Pages) Rohm – Silicon Monolithic Integrated Circuit

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◇STRUCTURE
◇PRODUCT
◇PART NUMBER
◇PHYSICAL DIMENSION
◇BLOCK DIAGRAM
◇USE
◇FEATURES
Silicon Monolithic Integrated Circuit
4K×8 bit Electrically Erasable PROM
BU9890GUL-W
Fig.-1（VCSP50L1）
Fig.-2
General purpose
・4K words × 8 bits architecture serial EEPROM
・Wide operating voltage range (1.7V～3.6V)
・Two wire serial interface
・Self-timed write cycle with automatic erase
・32 byte Page Write mode
・Low power consumption。
Write （3.3V） ： 0.6mA (Typ.)
Read （3.6V） ： 0.6mA (Typ.)
Standby （3.6V） ： 0.1μA (Typ.)
・DATA security
Write protect feature (WP pin)
Inhibit to WRITE at low VCC
・WLCSP 6pin package
・High reliability fine pattern CMOS technology
・Endurance : 100,000 erase/write cycles
・Data retention : 40 years
・Filtered inputs in SCL・SDA for noise suppression
・Initial data FFh in all address
・Pull-up resistor inputs in SCL・SDA
◇ABSOLUTE MAXIMUM RATING (Ta=25℃
Parameter
Supply Voltage
Symbol
VCC
Rating
Unit
-0.3～6.5
V
Power Dissipation
Ｐｄ
220 *1
mW
Storage Temperature
Tstg
-65～125
℃
Operating Temperature Topr
-40～85
℃
Terminal Voltage
－
-0.3～Vcc+1.0 *2
V
*1 Degradation is done at 2.2mW/℃（*1） for operation above 25℃
*2 Maximum value of Terminal Voltage is below 6.5V.
◇RECOMMENDED OPERATING CONDITION
Parameter
Symbol
Rating
Unit
Write
Supply Voltage
Vcc
Read
Input Voltage
V_IN
2.7～3.3
V
1.7～3.6
0～Vcc
V
REV. A