BU9891GUL-W_12 Datasheet, PDF (1/26 Pages) Rohm – WLCSP EEPROM

Datasheet
Serial EEPROM Series Standard EEPROM
WLCSP EEPROM
BU9891GUL-W (4Kbit)
●General Description
BU9891GUL-W is serial EEPROM of serial 3-line interface method
●Features
„ 3-line communications of chip select, serial clock, serial data input /
output (the case where input and output are shared)
„ Actions available at high speed 2MHz clock (2.5V to 5.5V)
„ Speed write available (write time 5ms max.)
„ 1.7V to 5.5V single power source action
„ Address auto increment function at read action
„ Write mistake prevention function
¾ Write prohibition at power on
¾ Write prohibition by command code
¾ Write mistake prevention function at low voltage
„ Program cycle auto delete and auto end function
„ Program condition display by READY / BUSY
„ Low current consumption
¾ At write action (at 5V): 1.2mA (Typ.)
¾ At read action (at 5V): 0.3mA (Typ.)
¾ At standby action (at 5V): 0.1μA (Typ.) (CMOS input)
„ Data retention for 40 years.
„ Data rewrite up to 100,000times.
„ Data at shipment all addresses FFFFh
●Package W(Typ.) x D(Typ.) x H(Max.)
●BU9891GUL-W
Capacity
4Kbit
Bit format
256×16
Type
BU9891GUL-W
Power source voltage
1.7V to 5.5V
Package type
VCSP50L1
●Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
Ratings
Unit
Remarks
Impressed voltage
VCC
-0.3 to +6.5
V
Permissible dissipation
Pd
220
mW When using at Ta=25℃ or higher, 2.2mW to be reduced per 1℃
Storage temperature range Tstg
-65 to +125 ℃
Action temperature range Topr
-40 to +85
℃
Terminal voltage
‐ -0.3 to VCC+0.3 V
●Memory cell characteristics (VCC=1.7V to 5.5V)
Parameter
Number of data rewrite times ^*1
Min.
100,000
Data hold years ^*1
40
○Shipment data all address FFFFh
*_{1:Not 100% TESTED}
Limit
Typ.
-
-
Max.
-
-
Unit
Condition
Times Ta=25℃
Years Ta=25℃
○Product structure：Silicon monolithic integrated circuit
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111ï½¥14ï½¥001
○This product is not designed protection against radioactive rays
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TSZ02201-0R2R0G100440-1-2
3.SEP.2012 Rev.001