BU7411G Datasheet, PDF (1/5 Pages) Rohm – SILICON MONOLITHIC INTEGRATED CIRCUIT

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STRUCTURE
SILICON MONOLITHIC INTEGRATED CIRCUIT
FUNCTION
LOW POWER SINGLE CMOS OPERATIONAL AMPLIFIER
PRODUCT SERIES BU7411G
BU7411SG
FEATURES
・Wide operating temperature range (BU7411SG：-40[℃]～105[℃])
・Low input bias current(1[pA] typ.)
・Slew Rate(2.4[V/ms] typ.)
・Low supply current(0.35[μA] typ.)
・Low power supply voltage operation(1.6[V]～5.5[V])
○ABSOLUTE MAXIMUM RATINGS(Ta=25[℃])
Parameter
Symbol
Rating
Unit
Supply Voltage
VDD-VSS
＋7
V
Power dissipation
Pd
540(*1)(*2)
mW
Differential Input Voltage(*3)
Vid
VDD-VSS
V
Input Common-mode Voltage Range
Vicm
(VSS-0.3)～VDD+0.3
V
Operating Temperature range
BU7411
-40～+85
Topr
℃
BU7411S
-40～+105
Storage Temperature Range
Tstg
-55～+125
℃
Maximum junction Temperature
Tjmax
+125
℃
・This IC is not designed for protection against radioactive rays.
(*1) To use at temperature above Ta＝25[℃] reduce 5.4[mW].
(*2) Mounted on a glass epoxy PCB(70[mm]×70[mm]×1.6[mm]).
(*3) The voltage difference between inverting input and non-inverting input is the differential input voltage.
Then input terminal voltage is set to more than VSS.
○OPERATING CONDITION(BU7411G:Ta=-40[℃]～+85[℃] BU7411SG:Ta=-40[℃]～+105[℃])
Parameter
Symbol
Rating
Unit
Supply Voltage
VDD
＋1.6～＋5.5 (Single Supply)
V
REV. D