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BD9610AMUV-E2 Datasheet, PDF (1/30 Pages) Rohm – 60V Synchronous Step-down Switching Regulator(Controller type)
High Performance Switching Regulator Series
60V Synchronous Step-down
Switching Regulator(Controller type)
BD9610AMUV
●General Description
The BD9610AMUV is a family of high resistance and
wide-input voltage (10V to 56V), synchronous,
step-down switching regulator. BD9610AMUV offers
design flexibility with a variety of user-programmable
functions, including soft-start, operating frequency,
high-side current limit, and loop compensation.
BD9610AMUV uses the pulse-width modulation
method of the voltage mode, and drives 2 external
Nch-FETs. The externally programmable current limit
provides pulse-by-pulse current limit, as well as
hiccup mode operation utilizing an internal fault
counter for longer duration overloads.BD9610AMUV
is safe for pre-biased outputs, not turning on the
synchronous rectifier until the high-side FET has
already started switching
●Features
■ High Resistance and Wide Range Input
Voltage :VCC=10V~56V
■ Internal Outside FET Gate Driver:REG10=10V
■ 0.8V±1.0% Reference Voltage Accuracy
■ Safe for Pre-biased Outputs
■ Adjustable Oscillating Frequency and Soft-Start
■ Master/Slave Synchronize Function
■ Over Current Protection (OCP)
■ Under Voltage Locked Output(UVLO)
■ Thermal Shut-down(TSD)
●Key Specifications
■ Input Supply Voltage
■ Output Voltage
■ Reference Voltage Accuracy
■ Gate Drive Voltage(REG10)
■ Frequency
10~56 [V]
1.0~(Vin×0.8) [V]
±1.0 [%]
9~11 [V]
50~500 [kHz]
●Package
VQFN020V4040
4.00 ㎜×4.00 ㎜×1.00 ㎜
●Applications
■ Amusement machines
■ FA Equipments
■ OA Equipments
■ LED Lighting Equipments
■ General Equipments used 24V,48V Bus line
●Typical Application Circuit
Vo
140kΩ
10kΩ
FB
1kΩ 11kΩ
180pF 4700pF
INV
SS
0.01μF
REG5
0.1μF
RTSS
0.01μF
RT
75kΩ
SYNC
CLKOUT
ON/OFF 1μF
CTL
VCC
CLH
CLL
RCL
20kΩ
BST
10μF×4
5mΩ
VIN
VIN
=15-56V
HG
BD9610AMUV
0.47μF
LX
REG10
Nch
SUD23N06-31L
(Vishay Siliconix)
Vo
10μF×4
VOUT
=12V
5μH
(DCR=3mΩ)
220μF
LG
1μF
Nch
SUD23N06-31L
(Vishay Siliconix)
●A Type of Efficiency
η=95%
(Vin=34V,Io=10A,fosc=250kHz)
100
90
80
70
60
Vin=34V,Vo=12V
50
0
5
10
15
Iout [A]
GND
PGND
○STRUCURE:Silicon Monolithic Integrated Circuit ○Not designed to withstand radiation.
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© 2011 ROHM Co., Ltd. All rights reserved.
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TSZ02201-0Q1Q0AJ00010-1-2
24.OCT.2014 Rev.002