EP610 Datasheet, PDF (4/9 Pages) Rochester Electronics – High-performance, 16-macrocell Classic EPLD Pipelined data rates of up to 100 MHz

EP610
Absolute Maximum Ratings
Symbol
Parameter
Conditions
V_CC
V_I
I_MAX
I_OUT
P_D
T_STG
T_AMB
T_J
Supply voltage
DC input voltage
DC VCC or GND current
DC output current, per pin
Power dissipation
Storage temperature
Ambient temperature
Junction temperature
With respect
to GND
No bias
Under bias
Under bias
EP610
EP610T
EP610-XX/B
Min
Max
-2.0
7.0
-2.0
7.0
-175
175
-25
25
1000
-65
150
-65
135 (125)
(150)
EP610I
Min Max Unit
-2.0 7.0 V
-0.5
V_CC+
0.5
V
mA
mA
mW
-65 150 °C
-10 85 °C
°C
Recommended Operating Conditions
Symbol
Parameter
Conditions
V_CC
Supply voltage
V_I
Input voltage
V_O
Output voltage
T_A Operating Temperature For commerical use
T_A Operating Temperature For industrial use
T_C
Case Temperature
For military use
t_R
Input rise time
t_F
Input fall time
EP610
EP610T
EP610-XX/B
Min
Max
4.75 (4.5)
0
0
0
-40
-55
5.25 (5.5)
V_CC
V_CC
70
85
125
100 (50)
100 (50)
EP610I
Min Max Unit
4.75 5.25 V
0
V_CC
V
0
V_CC
V
0 70 °C
-40 85 °C
°C
500 ns
500 ns
Recommended Operating Conditions
Symbol
Parameter
Conditions Min
V_IH
High-level input voltage
2.0
V_IL
Low-level input voltage
-0.3
V_OH
High-level TTL output voltage I_OH = -4 mA DC 2.4
V_OH High-level CMOS output voltage I_OH = -2 mA DC 3.84
V_OL
Low-level output voltage
I_OL = 4 mA DC
I_I
Input leakage output
V_I = V_CC or GND -10
I_OZ Tri-state output leakage current V_O = V_CC or GND -10
Typ Max Unit
V_CC + 0.3 V
0.8
V
V
V
0.45
V
10
µA
10
µA
Specification Number EP610-CI (AT) REV -
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