RFG1M20180 Datasheet, PDF (9/11 Pages) RF Micro Devices – 180W GaN Power Amplifier

RFG1M20180
Bias Instruction for RFG1M20180 1.93GHz to 2.17GHz Evaluation Board
 ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board.
 Evaluation board requires additional external fan cooling.
 Connect all supplies before powering up the evaluation board.
1. Connect RF cables at RFIN and RFOUT.
2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this
ground terminal.
3. Apply -5V to VG.
4. Apply 48V to VD.
5. Increase V_G until drain current reaches desired 600mA bias point.
6. Turn on RF input.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS130822
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
9 of 11