RFG1M20180 Datasheet, PDF (1/11 Pages) RF Micro Devices – 180W GaN Power Amplifier

RFG1M20180
180W GaN Power Amplifier
1.8GHz to 2.2GHz
The RFG1M20180 is optimized for commercial infrastructure
applications in the 1.8GHz to 2.2GHz frequency band, ideal for
WCDMA and LTE applications. Using an advanced 48V high power
density gallium nitride (GaN) semiconductor process optimized for high
peak to average ratio applications, these high-performance amplifiers
achieve high efficiency and flat gain over a broad frequency range in a
single amplifier design. The RFG1M20180 is an input matched GaN
transistor packaged in an air cavity ceramic package, which provides
excellent thermal stability. Ease of integration is accomplished through
the incorporation of simple, optimized matching networks external to
the package that provide wideband gain, efficiency, and linearizable
performance in a single amplifier.
RF IN
VGQ
Pin 1 (CUT)
GND
BASE
RF OUT
VDQ
Pin 2
Functional Block Diagram
Ordering Information
RFG1M20180S2
Sample bag with 2 pieces
RFG1M20180SB
Bag with 5 pieces
RFG1M20180SQ
Bag with 25 pieces
RFG1M20180SR
Short Reel with 50 pieces
RFG1M20180TR13
13” Reel with 300 pieces
RFG1M20180PCBA-410 Evaluation Board
RFG1M20180
Package: Flanged Ceramic, 2-Pin,
RF400-2
Features
■ Advanced GaN HEMT Technology
■ Typical Peak Modulated Power
>180W
■ Advanced Heat-Sink Technology
■ Single Circuit for 1.8GHz to
2.2GHz
■ 48V Operation Typical
Performance
 P_OUT = 45.5dBm
 Gain = 15dB
 Drain Efficiency = 31%
 ACP = -38dBc
 Linearizable to -55dBc with
DPD
■ -25°C to 85°C Operating
Temperature
■ Optimized for Video Bandwidth
and Minimized Memory Effects
■ RF Tested for 3GPP Performance
■ RF Tested for Peak Power Using
IS95
■ Large Signal Models Available
Applications
■ Commercial Wireless Infrastructure
■ High Efficiency Doherty
■ High Efficiency Envelope Tracking
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
DS130822
RF MICRO DEVICES^® and RFMD^® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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