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| RFG1M20180 Datasheet, PDF (7/11 Pages) RF Micro Devices – 180W GaN Power Amplifier | |||
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RFG1M20180
1.93GHz to 2.17GHz Evaluation Board Schematic
VGATE
C10
C9
C8
C6
VDRAIN
C7
C11
C12
+ C13
RF IN
50 ï ïstrip
C1
C2
C3
R1
RFG1M20180
C5
C4
50 ï ïstrip
RF OUT
1.93GHz to 2.17GHz Evaluation Board Bill of Materials (BOM)
Item
Value
Manufacturer
C1, C5, C6, C7
8.2pF
ATC
C2, C3
1.5pF
ATC
C4
2.2pF
ATC
C8, C11
0.1µF
Murata
C9, C12
4.7µF
Murata
C10
100µF
Panasonic
C13
330µF
Panasonic
R1
10â¦
Panasonic
PCB
RF35, 0.020â thick
Taconic
dielectric
Manufacturerâs P/N
ATC100B8R2CT
ATC100B1R5JT
ATC100B2R2JT
GRM32NR72A104KA01L
GRM55ER72A475KA01L
ECE-V1HA101UP
EEU-FC2A331
ERJ-8GEYJ100V
-
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS130822
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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