SDA-2000 Datasheet, PDF (8/8 Pages) RF Micro Devices – GaAs Distributed Amplifier

SDA-2000
Measurement Technique
All data presented in this document represents the integrated circuit and accompanying bond wires.
All performance data reported in this document were measured in the following manner. Data was taken using a temperature
controlled probe station utilizing 150μm pitch GSG probes. The interface between the probes and integrated circuit was made
with a coplanar to microstrip ceramic test interface. The test interface was wire bonded to the die using 1mil diameter bondwires.
The spacing between the test interface and the die was 200μm, and the bond wire loop height was 100μm. The calibration
of the test fixture included the probes and test interfaces, so that the measurement reference plane was at the point of
bond wire attachment to the ceramic interface.
SDA-2000 Product Image
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The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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