SDA-2000 Datasheet, PDF (2/8 Pages) RF Micro Devices – GaAs Distributed Amplifier

SDA-2000
Absolute Maximum Ratings
Parameter
Drain Bias Voltage (VDD)
Gate Bias Voltage (VTI)
Gate Bias Voltage (VG2)
RF Input Power (VDD = +7.0VDC)
Operating Junction Temperature (TJ)
Continuous Power Dissipation (T = +85°C)
Thermal Resistance (Pad to Die Bottom)
Storage Temperature
Operating Temperature
ESD JESD22-A114 Human Body
Model (HBM)
Rating
+9.0
-2 to +1
(VDD-8.0) to VDD
+175
5
17
-40 to +150
-40 to +85
Class 0 (All Pads)
Nominal Operating Parameters
Parameter
Specification
Unit
Min Typ Max
General Performance
Operating Frequency
DC
22 GHz 3dB BW
Gain
12
dB 10GHz
Output Voltage
OIP3 at Mid-Band
8
VP-P
38
dBm 10GHz
P1dB at Mid-Band
24
dBm 10GHz
Noise Figure at Mid-Band
6.0
dB 10GHz
Input Return Loss
20
dB
Output Return Loss
17.5
Supply Current
410
mA
Supply Voltage
8.0
VDC
*Adjust VTI between -2.0VDC to 0VDC to achieve IDD = 410mA typical.
Unit
VDC
VDC
VDC
dBm
°C
W
°C/W
°C
°C
Caution! ESD sensitive device.
RFMD Green: RoHS compliant per EU
Directive 2011/65/EU, halogen free per
IEC 61249-2-21, <1000ppm each of
antimony trioxide in polymeric materials
and red phosphorus as a flame retardant,
and <2% antimony solder.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Condition
TA = +25°C, VDD = +8V, VG2 = +3.5VDC,
IDD = 410mA*
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS140204
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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