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RFHA1028 Datasheet, PDF (7/11 Pages) RF Micro Devices – 160W GaN Wide-Band Pulsed Power Amplifier
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RFHA1028
PRELIMINARY
Bias Instruction for RFHA1028 1.2GHz to 1.4GHz Evaluation Board
ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board.
Evaluation board requires additional external fan cooling.
Connect all supplies before powering evaluation board.
1. Connect RF cables at RFIN and RFOUT.
2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this
ground terminal.
3. Apply -5V to VG1 and VG2.
4. Apply 45V to VD1 and VD2.
5. Increase VG1 until drain current for VD1 reaches 50mA or desired bias point.
6. Increase VG2 until drain current for VD2 reaches 300mA or desired bias point.
7. Turn on the RF input.
IMPORTANT NOTE: Depletion mode device - when biasing the device VG must be applied BEFORE VD. When removing bias VD
must be removed BEFORE VG is removed. Failure to follow sequencing will cause the device to fail.
Note: For optimal RF performance, consistent and optimal heat removal from the base of the package is required. A thin layer of
thermal grease should be applied to the interface between the base of the package and the equipment chassis. It is recommended
a small amount of thermal grease is applied to the underside of the device package. Even application and removal of excess
thermal grease can be achieved by spreading the thermal grease using a razor blade. The package should then be bolted to the
chassis and input and output leads soldered to the circuit board.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS130923
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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