RFHA1028 Datasheet, PDF (3/11 Pages) RF Micro Devices – 160W GaN Wide-Band Pulsed Power Amplifier

RFHA1028
PRELIMINARY
Parameter
Specification
Unit
Min Typ Max
RF Functional Test
Small Signal Gain
23
dB
Output Power
51
52
dBm
Power Gain
24.5 25
dB
Drain Efficiency
38
42
%
Input Return Loss
-15 -10 dB
2nd Harmonic
-33.5
dBc
3rd Harmonic
-20.5
dBc
Small Signal Gain
25.5
dB
Output Power
51 52.5
dBm
Power Gain
25 25.6
dB
Drain Efficiency
45
50
%
Input Return Loss
-14.5 -10 dB
2nd Harmonic
-35
dBc
3rd Harmonic
-25.5
dBc
Small Signal Gain
28.5
dB
Output Power
51 51.7
dBm
Power Gain
24.5 25.2
dB
Drain Efficiency
45
52
%
Input Return Loss
-17 -10 dB
2nd Harmonic
-27.5
dBc
3rd Harmonic
-25
dBc
RF Typical Performance
Small Signal Gain
26.5
dB
Gain Variation with Temperature
0.02
dB/°C
Output Power (PSAT)
52.5
dBm
178
W
Drain Efficiency
48.0
%
Power Gain
25
dB
Efficiency
50
%
Input Return Loss
-15
dB
[1] Test Conditions: PW = 1ms,DC = 10%, VDSQ = 45V, IDQ1 = 50mA, IDQ2 = 300mA, T = 25ºC.
[2] Performance in a standard tuned test fixture.
Condition
f = 1.2GHz, PIN = 0dBm [1, 2]
f = 1.2GHz, PIN = 27dBm [1, 2]
f = 1.3GHz, PIN = 0dBm [1, 2]
f = 1.3GHz, PIN = 27dBm [1, 2]
f = 1.4GHz, PIN = 0dBm [1, 2]
f = 1.4GHz, PIN = 27dBm [1, 2]
PIN = 0dBm [1, 2]
At peak output power [1, 2]
PIN = 27dBm [1, 2]
At peak output power [1, 2]
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS130923
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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