RFHA1028 Datasheet, PDF (2/11 Pages) RF Micro Devices – 160W GaN Wide-Band Pulsed Power Amplifier

RFHA1028
PRELIMINARY
Absolute Maximum Ratings
Parameter
Rating
Unit
Caution! ESD sensitive device.
Drain Voltage Output Stage (VD2)
Drain Voltage Input Stage (VD1)
Gate Voltage (VG)
Operating Voltage
150
V
100
V
-6 to 2
V
45
V
RoHS (Restriction of Hazardous
Substances): Compliant per EU Directive
2011/65/EU.
Ruggedness (VSWR)
10:1
Storage Temperature Range
Operating Temperature Range (TC)
Operating Junction Temperature (TJ)
Human Body Model
MTTF (TJ < 200°C, 95% Confidence Limits)*
MTTF (TJ < 250°C, 95% Confidence Limits)*
-55 to +125
-40 to +85
250
Class 1A
3.0E + 06
1.4E + 05
°C
°C
°C
Hours
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Thermal Resistance, RTH (Junction to Case)
TC =85°C, DC Bias Only**
RTH1 = 3.5, RTH2 = 1.1
°C/W
TC =85°C, 1ms Pulse, 10% Duty Cycle
TBD
* MTTF – median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability. Refer to
product qualification report for FIT(random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current
must not exceed the maximum operating values specified in the table above.
Bias Conditions should also satisfy the following expression: PDISS < (TJ – TC) / RTH J-C and TC = TCASE
** Rth1 (driver stage) and Rth2 (output stage) – estimated Rth data
Nominal Operating Parameters
Parameter
Specification
Unit
Min Typ Max
Recommended Operating
Conditions
Drain Voltage (VDSQ)
Gate Voltage (VGSQ)
Drain Bias Current
Gate Current Input Stage (IG1)
Gate Current Output Stage (IG2)
Frequency of Operation
DC Functional Test
-5
1200
45
-3
350
TBD
TBD
V
-2
V
mA
1400 MHz
VGSQ Stage 1
VGSQ Stage 2
VDS(ON) – Stage 2
-3.2
V
-3.2
V
0.25
V
Condition
Stage 1 = 50mA, Stage 2 = 300mA
VD = 45V, ID Stage 1 = 50mA
VD = 45V, ID Stage 2 = 300mA
VG = 0V, ID = 1.0A, Wafer level test
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS130923
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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