RF3931D Datasheet, PDF (7/9 Pages) RF Micro Devices – 30W GaN on SiC Power Amplifier Die

RF3931D
Die Drawing (all dimensions in mm)
External dimension tolerance due to dicing process development.
Detail of Unit Cell
Bond Pad Key
G = Gate
S = Source
D = Drain
Die thickness = 0.101mm
Die backside metal = Au
Bias Instruction for RF3931D Die
 ESD Sensitive Material. Please use proper ESD precautions when handling devices die.
 Die must be mounted with minimal die attach voids for proper thermal dissipation.
 This device is a depletion mode HEMT and must have gate voltage applied for pinch off prior to applying drain voltage.
1. Mount device on carrier or package with minimal die attach voiding and applying proper heat removal techniques.
2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this
ground terminal.
3. Apply -8V to VG.
4. Apply 48V to VD.
5. Increase V_G until drain current reaches desired bias point.
6. Apply RF input.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS130906
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
7 of 9