RF3931D Datasheet, PDF (3/9 Pages) RF Micro Devices – 30W GaN on SiC Power Amplifier Die

RF3931D
Parameter
RF Typical Performance of
Packaged Die
VGS (Q)
Small Signal Gain
Output Power at P3dB
Drain Efficiency at P3dB
Specification
Min Typ Max
-3.5
20
14
47
46.5
65
63
Unit Condition
V
dB
dB
dBm
dBm
%
%
Test Conditions: CW operation, VDSQ = 48V, IDQ = 130mA,
T = 25°C, in a tuned test circuit.
f = 900MHz
f = 2140MHz
f = 900MHz
f = 2140MHz
f = 900MHz
f = 2140MHz
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS130906
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
3 of 9