RF3931D Datasheet, PDF (1/9 Pages) RF Micro Devices – 30W GaN on SiC Power Amplifier Die

RF3931D
30W GaN on SiC Power Amplifier Die
The RF3931D is a 48V, 30W, GaN on SiC high power discrete
amplifier die designed for commercial wireless infrastructure, cellular
and WiMAX infrastructure, industrial/scientific/medical and general
purpose broadband amplifier applications. Using an advanced high
power density Gallium Nitride (GaN) semiconductor process, the
RF3931D is able to achieve high efficiency and flat gain over a broad
frequency range in a single amplifier design with proper packaging and
assembly. The RF3931D is an unmatched 0.5m gate, GaN transistor
die suitable for many applications with > 46.5dBm saturated power,
> 63% drain efficiency, and >14dB small signal gain at 2GHz.
RF IN
VG
RF OUT
VD
GND
Functional Block Diagram
Ordering Information
RF3931D
30W GaN on SiC Power Amplifier Die
RF3931D
Package: Die
Features
■ Broadband Operation DC to 4GHz
■ Advanced GaN HEMT Technology
■ Packaged Small Signal
Gain = 14dB at 2GHz
■ 48V Typical Packaged
Performance
 Output Power: 50W at P3dB
 Drain Efficiency: 65% at P3dB
■ Large Signal Models Available
■ Chip Dimensions:
0.96mm x 1.33mm x 0.10mm
■ Active Area Periphery: 6.6mm
Applications
■ Commercial Wireless
Infrastructure
■ Cellular and WiMAX
Infrastructure
■ Civilian and Military Radar
■ General Purpose Broadband
Amplifiers
■ Public Mobile Radios
■ Industrial, Scientific, and
Medical
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
DS130906
RF MICRO DEVICES^® and RFMD^® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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