RFCM3326 Datasheet, PDF (6/8 Pages) RF Micro Devices – 45-1218MHZ GAAS/GAN POWER DOUBLER MODULE

RFCM3326
Evaluation Board Schematic
V+
GND
FB1
Bead 60Ω
C1
220pF
D1
TGL34-33A
D2
MM3Z5V6T1
RF IN
C2
R4
4.7nF _7.5Ω
C9
R7
DNI
DNI
R8
DNI
R9
DNI
C10
0.3pF
T1
RFXF0006
R1
5.1kΩ
R2
3kΩ
R3
1.5kΩ
R13
3.3kΩ
C3
4.7nF
9
1
C4
1.2pF
R5
1kΩ
2
U1
8
7
C6
R6
4.7nF
1kΩ
3
RFCM3326
6
4
5
C5
1.2pF
Evaluation Board Assembly Drawing
Vt
C13
4.7nF
T2
RFXF0008
T3
RFXF0009
C8
4.7nF
C7
4.7nF
C11 R10
0.5pF DNI
R11
DNI
R12
DNI
RF OUT
C12
DNI
Note:
The ground plane of the RFCM3326 module should be soldered onto a board equipped with as many thermal vias as possible.
Underneath this thermal via array a heat sink with thermal grease needs to be placed which is able to dissipate the complete
module DC power (up to 10.4 Watts). In any case the module backside temperature should not exceed 110°C.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
DS141006
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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