RFCM3326 Datasheet, PDF (4/8 Pages) RF Micro Devices – 45-1218MHZ GAAS/GAN POWER DOUBLER MODULE

RFCM3326
RFCM3326 Current Adjustment
The RFCM3326 can be operated over a wide range of current to provide maximum required performance with
minimum current consumption. Changing the value of resistor R3 on application circuit allows a variation of the current
between 430mA and 330mA (typ.). Within the recommended range of current between 430mA and 370mA gain (S21)
change is less than 0.2dB and noise figure change is less than 0.1dB.
Current versus Resistor R3 (typical values)
I [mA]
440
420
400
380
360
340
320
1050
1100
1150
1200
1250
1300
1350
1400
1450 1500
R3 [Ω]
Device Current [mA],
typical
430
410
390
370
350
330
R3 [Ω]
V+= 24V; TMB=30°C;
ZS=ZL=75Ω
1500
1400
1300
1240
1150
1050
Device Current versus Distortion Degradation (typical values)
I [mA]
440
420
400
380
360
340
320
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
CTB and CIN degradation [dB]
CTB
CIN
Test condition:
V+= 24V; TMB=30°C; ZS=ZL=75Ω; VO=61dBmV at 1000MHz, 18dB extrapolated tilt,
79 analog channels plus 75 digital channels (-6dB offset)
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
DS141006
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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