RFCM3326 Datasheet, PDF (1/8 Pages) RF Micro Devices – 45-1218MHZ GAAS/GAN POWER DOUBLER MODULE

RFCM3326
45-1218MHZ GAAS/GAN
POWER DOUBLER MODULE
The RFCM3326 is a Power Doubler amplifier SMD Module. The
part employs GaAs pHEMT die and GaN HEMT die, has high
output capability, and is operated from 45MHz to 1218MHz. It
provides excellent linearity and superior return loss performance
with low noise and optimal reliability.
DC current of the device can be externally adjusted for optimum
distortion performance versus power consumption over a wide
range of output level.
Current Temperature
Setting
Sensing _V+
INPUT
RFCM3326
OUTPUT
Package: 9 pin,
9.0 mm x 8.0 mm x 1.375mm
Features
 Excellent Linearity
 Superior Return Loss Performance
 Extremely Low Distortion
 Optimal Reliability
 Low Noise
 Unconditionally Stable Under all
Terminations
 Extremely High Output Capability
 24.5dB Min. Gain at 1218MHz
 450mA Max. at 24VDC
 Temperature Sensing Feature
Applications
 45MHz to 1218MHz CATV
Amplifier Systems
Functional Block Diagram
Ordering Information
RFCM3326SB
RFCM3326SQ
RFCM3326SR
RFCM3326TR7
RFCM3326TR13
RFCM3326PCBA-410
Sample bag with 5 pieces
Sample bag with 25 pieces
7” Reel with 100 pieces
7” Reel with 500 pieces
13” Reel with 1000 pieces
Fully Assembled Evaluation Board
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
DS141006
RF MICRO DEVICES^® and RFMD^® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
1 of 8