SBB-2000 Datasheet, PDF (5/6 Pages) RF Micro Devices – 50MHZ TO 1000MHZ, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER

Preliminary
Die Dimensions
SBB-2000
Bond Pad Description
Bond Pad Function/Description
RF IN
This pad is DC coupled and matched to 50Ω. An external DC block is required.
RF OUT
This pad is DC coupled and matched to 50Ω. DC bias is applied through this pad.
DIE
BACKSIDE
Die backside must be connected to RF/DC ground using silver filled conductive epoxy.
Notes:
1. All dimensions in inches [millimeters].
2. Die Thickness is 0.004 [0.100].
3. Typical bond pad is 0.004 (0.100) square.
4. Backside metallization: Gold.
5. Bond pad metallization: Gold.
6. Backside is ground.
Device Assembly
EDS-106099 Rev A
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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