SBB-2000 Datasheet, PDF (1/6 Pages) RF Micro Devices – 50MHZ TO 1000MHZ, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER

Preliminary ^SBB-2000
50MHz to
1000 MHz,
Cascadable
Active Bias
InGaP HBT
MMIC Ampli-
fier
SBB-2000
50MHZ TO 1000MHZ, CASCADABLE ACTIVE
BIAS InGaP HBT MMIC AMPLIFIER
Package: Bare Die
Product Description
RFMD’s SBB-2000 is a high performance InGaP HBT MMIC amplifier utilizing a Darlington con-
figuration with an active bias network. The active bias network provides stable current over tem-
perature and process Beta variations. Its efficient operation from a single 5V supply and its
compact size (0.59mmx0.70mm) make it ideal for high-density multi-chip module applica-
tions. It is well-suited for high linearity 5V gain block applications and it is internally matched to
50 Ω.
RFMD can provide 100% DC screening, visual inspection, and Hi-Rel wafer qualification. Die
can be delivered at the wafer level or picked to gel or waffle paks.
Optimum Technology
Matching® Applied
Gain and Return Loss versus Frequency
30.0
V_S=5V, I_S=90mA
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
20.0
10.0
0.0
GSG Probe Data with Bias Tees
ZS=ZL=50 Ohms, T=25°C
-10.0
-20.0
IRL
-30.0
Gain
ORL
-40.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Frequency (GHz)
Features
OIP3=42.5dBm @ 250MHz
P1dB=21.5dBm @ 500MHz
Single Fixed 5V Supply
Compact Die Size
(0.59 mm x 0.70 mm)
Patented Thermal Design and
Bias Circuit
Low Thermal Resistance
Applications
PA Driver Amp
RF Pre-driver and RF Receive
Path
Military Communications
Test and Instrumentation
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
Frequency of Operation
50
1000
MHz
Small Signal Gain
20.0
dB
Freq = 250 MHz
20.0
dB
Freq = 500 MHz
19.5
dB
Freq = 1000 MHz
Output Power at 1dB Compression
22.5
dBm
Freq = 250 MHz
21.5
dBm
Freq = 500 MHz
20.0
dBm
Freq = 1000 MHz
Output IP₃
42.5
39.5
dBm
dBm
Freq = 250 MHz
Freq = 500 MHz
34.5
dBm
Freq = 1000 MHz
Input Return Loss
30.0
dB
Freq = 500 MHz
Output Return Loss
14.5
dB
Freq = 500 MHz
Current
90
mA
Noise Figure
3.0
dB
Freq = 500 MHz
Thermal Resistance
48.8
°C/W
Junction to lead (89 pkg)
Test Conditions: V_D=5V, I_D=90mA, T=25°C, OIP3 Tone Spacing=1MHz, P_OUT/tone=0dBm. GSG Probe Data with Bias Tees.
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EDS-106099 Rev A
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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