RFCM3050 Datasheet, PDF (4/6 Pages) RF Micro Devices – 40-1003MHZ GAAS/GAN POWER DOUBLER MODULE

V+
GND
C1
4.7nF
D1
TGL34-33A
R1
10kΩ
D2
MM3Z5V6T1
Application Circuit
FB1
Bead 60Ω
RFCM3050
40-1003MHZ GAAS/GAN
POWER DOUBLER MODULE
RF IN
R7
C9
0Ω
DNI
R8
0Ω
R9
0Ω
C2
R4
4.7nF
10Ω
T1
RFXF0010
C10
DNI
D3
TQP200001
Capacity by Bondpads
9
1
C3
1.2pF
8
2
U1
7
3
RFCM3050
R5
6
4
5
C6
1.2pF
T2
RFXF0008
C13
DNI
T3
RFXF0007
C7
4.7nF
R10
C11
0Ω
0.5pF
C14
C8
R11
DNI
4.7nF
0Ω
R12
0Ω
RF OUT
C12
DNI
Capacity by Bondpads
Evaluation Board Layout
Note:
The ground plane of the RFCM3050 module should be soldered onto a board equipped with as many thermal vias as possible. Underneath this
thermal via array a heat sink with thermal grease needs to be placed which is able to dissipate the complete module DC power (up to 10.6 Watts).
In any case the module backside temperature should not exceed 100°C.
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